首页> 外国专利> COPPER AND COPPER BASE ALLOY EXCELLENT IN WIRE BONDING PROPERTY AND DIE BONDING PROPERTY AND PRODUCTION THEREOF

COPPER AND COPPER BASE ALLOY EXCELLENT IN WIRE BONDING PROPERTY AND DIE BONDING PROPERTY AND PRODUCTION THEREOF

机译:铜和铜基合金在线键合性能和冲模键合性能方面的优异表现及其生产

摘要

PROBLEM TO BE SOLVED: To obtain good solderability in a die pat part without using flux by using an alloy in which crystal grain size lies in a specified range, and the center line average roughness (Ra) and the thickness of an oxidized film are controlled to the value equal to or below the specified one respectively. ;SOLUTION: By heat treatment, copper and copper base alloys having 10 to 150 μm crystal grain size, ≤0.15 μm center line average roughness (Ra) and ≤6 nm oxidized film thickness and excellent in wire bonding properties and die bonding properties are obtd. This copper and copper base alloys, which contain, by weight, 0.01 to 0.5% P or at least one kind from the group of Fe, Ni, Sn, Zn, Cr, Co, Si, Mg, Ti and Zr by 0.01 to 5.5% in total, and the balance Cu with inevitable impurities, are heat-treated at 300 to 900°C for 0.01 to 72 hr in an atmosphere of ≤5% oxygen concn. For stably joining a lead frame and a bonding wire, the surface roughness of the material is desirably controlled to 0.06 to 0.12 μm. By controlling the crystal grain size range to the above, solder uniformly spreads.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:通过使用晶粒尺寸在指定范围内的合金来控制裸片的良好焊接性而不使用助熔剂,并且控制中心线平均粗糙度(Ra)和氧化膜的厚度分别等于或小于指定的值。 ;解决方案:通过热处理,铜和铜基合金的晶粒尺寸为10至150μm,中心线平均粗糙度(Ra)≤0.15μm,氧化膜厚度≤6 nm,且引线键合性能和芯片键合性能优异。这种铜和铜基合金,按重量计含有0.01至0.5%P或选自Fe,Ni,Sn,Zn,Cr,Co,Si,Mg,Ti和Zr的至少一种在氧气浓度≤5%的气氛中,将300%的总铜和剩余不可避免的杂质Cu在300-900℃下热处理0.01-72小时。为了稳定地接合引线框架和接合线,期望将材料的表面粗糙度控制为0.06至0.12μm。通过将晶粒尺寸控制在上述范围内,焊锡均匀分布。;版权所有:(C)2000,JPO

著录项

  • 公开/公告号JP2000273560A

    专利类型

  • 公开/公告日2000-10-03

    原文格式PDF

  • 申请/专利权人 DOWA MINING CO LTD;

    申请/专利号JP19990124698

  • 发明设计人 SATO TOSHIHIRO;KATAOKA MASAHIRO;

    申请日1999-03-26

  • 分类号C22C9/00;C22C9/01;C22C9/02;C22C9/04;C22C9/05;C22C9/06;C22C9/08;C22C9/10;C22F1/00;C22F1/08;

  • 国家 JP

  • 入库时间 2022-08-22 02:00:47

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