SEMICONDUCTOR LASER DIODE, ITS MANUFACTURE LIGHT MODULATOR, AND SEMICONDUCTOR LASER DIODE WITH LIGHT MODULATOR

摘要

PROBLEM TO BE SOLVED: To provide high output with less leak current by forming a current block layer on both sides of a mesa part while no P-type block layer is formed between the mesa part and a high-resistance block layer. ;SOLUTION: On both sides of a mesa part, a current block layer of laminating structure comprising a P-type InP block layer 11, N-type InP block layer 12, high-resistance block layer 5, and N-type InP layer 6 is formed while no P-type InP block layer 11 and N-type InP block layer 12 are formed on the side surface of mesa part. With this configuration, a PN junction surface wherein, comprising the high-resistance block layer 5, N-type InP block layer 12, and P-type InP block layer 11, a voltage is applied in such a direction as reverse bias is present between a P-type electrode 9 and N-type electrode 10 on both sides of the mesa part, raising a breakdown strength. The high-resistance block layer 5 is formed so as to contact both end surfaces of the mesa part, so a current concentrates on the mesa part for less leak current.;COPYRIGHT: (C)2000,JPO