PROBLEM TO BE SOLVED: To keep a practical breakdown voltage between respective chips by making a groove of specified width when a P layer is divided on the anode side while leaving a common cathode thereby decreasing the width of the groove. ;SOLUTION: Grooves are made in an N type semiconductor with a width D1 for cutting a P layer and a glass layer excellent in electric insulation is formed on the surface of the groove and on the end face of a chip over the entire periphery thereof. Surface of an N layer functions as a common cathode K. Each metal electrode M bonded onto the surface of the P layer functions as an anode electrode and a linked diode chip is formed. When the interval D1 between respective diode chips is in the range of 400-600 μm, a breakdown voltage of 2000 V can be kept stably between the chips. More specifically, the size can be reduced keeping the practical breakdown voltage of 1000 V-2000 V stably by setting the width of the groove in the range of 200-600 μm.;COPYRIGHT: (C)2000,JPO
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