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MECHANICAL-CHEMICAL POLISHING METHOD OF ALUMINUM OR ALUMINUM ALLOY CONDUCTIVE MATERIAL LAYER
MECHANICAL-CHEMICAL POLISHING METHOD OF ALUMINUM OR ALUMINUM ALLOY CONDUCTIVE MATERIAL LAYER
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机译:铝或铝合金导电材料层的机械化学抛光方法
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摘要
PROBLEM TO BE SOLVED: To improve an aluminum layer in surface state by a method, wherein an aluminum layer is polished by the use of a polishing composition which contains a colloid silica particle alkaline aqueous suspension, tetra-alkyl ammonium hydroxide and an oxidizing agent. ;SOLUTION: An aluminum or an aluminum alloy conductive material layer is polished with a polishing composition, which contains an alkaline aqueous suspension which contains colloidal silica particles which are not siloxane- bonded, individuated discrete, and 35 to 50 nm in average grain diameter, an element selected from among tetramethyl ammonium hydroxide, tetraethyl ammonium hydroxide, tetrapropyl ammonium hydroxide, and an oxidizing agent. By this setup, an aluminum or aluminum alloy plate can be enhanced in polishing rate and improved in surface state.;COPYRIGHT: (C)2000,JPO
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