METAL INDUCTION TYPE CONTINUOUS CRYSTALLIZED FILM OF SELECTIVE SITE, AND ITS CRYSTALLIZATION METHOD

摘要

PROBLEM TO BE SOLVED: To reduce a leak current and increase an electron mobility without affecting any layout, by making a growth site larger than the selective site of a transition-metals nucleus, and by crystallizing the growth site of a first film which is present between the selective site of the transition-metals nucleus and a magnification front line simultaneously with the completion of the annealing of the first film. SOLUTION: A transistor 210 is formed out of a first film 212 of an amorphous state, and a selective site 215 of the first film 212 of the amorphous state forms a transition-metals nucleus by the accumulation of transition-metals which is performed through an arbitrary means including an ion implantation. During annealing the first film 212, a transition-metals semiconductor compound 217 grows laterally along a magnification front line 219, centering the selective site 215 on the magnification front line 219. In a growth site between the transition-metals nucleus 215 and the magnification front line 219 (it is at least ten times as large as the selective site 215 of the transition-metals nucleus), a crystallized first film material 218 is formed, and a growth site 218 of the film material 218 is at least hundred times as large as the selective site 215.