首页> 外国专利> METALLIC MATERIAL WITH ENHANCED ADHESIVE POWER, LEAD FRAME FOR HIGHLY HEAT-RADIATING PACKAGE, AND HIGHLY HEAT-RADIATING SEMICONDUCTOR PACKAGE

METALLIC MATERIAL WITH ENHANCED ADHESIVE POWER, LEAD FRAME FOR HIGHLY HEAT-RADIATING PACKAGE, AND HIGHLY HEAT-RADIATING SEMICONDUCTOR PACKAGE

机译:具有增强的粘合力的金属材料,用于高度散热封装的铅骨架和高度散热的半导体封装

摘要

PROBLEM TO BE SOLVED: To obtain a metallic material which can prevent peeling or cracks from occurring at bonded parts by subjecting the surface of an adhesive layer formed on the surface of a metallic material to a plasma treatment to generate a good adhesion state between the adhesive layer and a sealing resin.;SOLUTION: After a metal 6 is stuck to the top of an inner lead 9 of a copper alloy lead frame with an adhesive layer 5 and the surface of the adhesive layer 5 is subjected to a plasma treatment in an O2 or CF2 atmosphere to form a heat-radiating member 6', an Si semiconductor chip 10 is fixed on the adhesive layer 5 of the heat-radiating member 6' with a silver paste. An inner lead 9 is connected to the electrode of the semiconductor chip 10 with a bonding wire 11. Then, an epoxy resin 12 for sealing is molded so as to cover the surroundings of the inner lead 9, the semiconductor chip 10, and the bonding wire 11, and an outer lead 13 is cut and formed to obtain a semiconductor package.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:通过对形成在金属材料表面上的粘合剂层的表面进行等离子体处理以在粘合剂之间产生良好的粘合状态,从而获得能够防止在粘合部分发生剥离或裂纹的金属材料。解决方案:将金属6用粘合层5粘合到铜合金引线框架的内部引线9的顶部,然后对粘合层5的表面进行等离子体处理。在O 2或CF 2气氛下形成散热构件6',用银膏将Si半导体芯片10固定在散热构件6'的粘合层5上。内部引线9通过接合线11连接到半导体芯片10的电极。然后,模制用于密封的环氧树脂12,以覆盖内部引线9,半导体芯片10和接合的周围。导线11,并切割并形成外引线13,以获得半导体封装。版权所有:(C)2000,JPO

著录项

  • 公开/公告号JP2000095971A

    专利类型

  • 公开/公告日2000-04-04

    原文格式PDF

  • 申请/专利权人 HITACHI CABLE LTD;

    申请/专利号JP19980268720

  • 发明设计人 YAMAGISHI ISAO;YONEMOTO TAKAHARU;

    申请日1998-09-22

  • 分类号C09D5/00;C09D179/08;H01L23/28;H01L23/50;

  • 国家 JP

  • 入库时间 2022-08-22 01:58:26

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