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Method for manufacturing CuInSe2-based thin-film solar cell

机译:CuInSe2基薄膜太阳能电池的制造方法

摘要

PURPOSE:To increase pass rate by finding out a proper method for evaluating a CuInSe2 thin film in the middle of the process, since a thin-film solar battery which is manufactured using the CuInSe thin film formed under the same conditions as an active layer has fluctuation in characteristics. CONSTITUTION:The photoluminescence which is emitted when the laser light is cast on a CuInSe2 thin film is measured and it is evaluated by its luminous strength. To be more specific, good products are obtained if such a lot is used as may contain a test piece having the photoluminescence spectrum whose maximum luminous intensity in the 0.8-0.9eV region is equal to a specified value or above or such a lot is used as may contain a test piece having the photoluminescence spectrum whose maximum luminous intensity in the 0.8-0.9eV region is more than twice that in the 0.9-1.0eV region, when the test piece is cooled down to the liquid nitrogen temperature. When the test piece is cooled to the liquid herium temperature, such a lot is used as may contain a test piece having the photoluminescence spectrum whose maximum luminous intensity in the 0.8-0.9eV region is equal to the specified value or above.
机译:目的:通过在过程中找到一种评估CuInSe2薄膜的适当方法来提高合格率,因为使用在与有源层相同的条件下形成的CuInSe薄膜制造的薄膜太阳能电池具有特征波动。组成:测量将激光投射到CuInSe2薄膜上时发出的光致发光,并通过其发光强度进行评估。更具体地说,如果使用这样的批次,则可以得到良好的产品,如果包含这样的试件,则该测试件的光致发光光谱的0.8-0.9eV区域中的最大发光强度等于或大于指定值,或者使用这样的批次当将试样冷却到液氮温度时,其可包含具有光致发光光谱的试样,其在0.8-0.9eV区域的最大发光强度是在0.9-1.0eV区域的最大发光强度的两倍以上。将试验片冷却至液氦温度时,可以使用具有光致发光光谱的试验片,其在0.8〜0.9eV区域的最大发光强度为规定值以上。

著录项

  • 公开/公告号JP2984114B2

    专利类型

  • 公开/公告日1999-11-29

    原文格式PDF

  • 申请/专利权人 株式会社富士電機総合研究所;

    申请/专利号JP19910305155

  • 发明设计人 大沢 通夫;

    申请日1991-11-21

  • 分类号H01L31/04;

  • 国家 JP

  • 入库时间 2022-08-22 01:57:48

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