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DEVICE FOR MAGNETRON PLASMA SPRAY COATING AND METHOD FOR SPRAY COATING A SUBSTRATE

机译:磁控等离子体喷涂的装置和基材的喷涂方法

摘要

Described is a sputtering apparatus and a method employing an auxiliary magnetic structure (11) situated between a substrate holder (5) and a target (4) of a plasma sputtering chamber (20) to control the lateral extent of the plasma. The auxiliary magnetic structure (11), possessing a lower field strength in the plasma region than a principal magnet (14) or magnets, is situated immediately outside of and around a circumference of the chamber's anode shield (10). The principal magnets (14) maintain the plasma in a ring adjacent to the sputtering target. The auxiliary magnet structure (11) causes the plasma ring to expand toward the edge of the target (4) or contract away from the edge depending on the magnetic strength and polarity of the structure and its position relative to the target (4). IMAGE
机译:描述了一种溅射设备和方法,该方法和方法采用位于磁体支架(5)和等离子体溅射室(20)的靶(4)之间的辅助磁性结构(11)来控制等离子体的横向范围。辅助磁性结构(11)在等离子体区域中具有比一个或多个主磁体(14)或多个磁体低的场强,该辅助磁性结构(11)位于腔室的阳极护罩(10)的周围并紧靠其周围。主磁体(14)将等离子体保持在与溅射靶相邻的环中。辅助磁体结构(11)使等离子体环朝着靶(4)的边缘膨胀或远离边缘收缩,这取决于结构的磁强度和极性以及其相对于靶(4)的位置。 <图像>

著录项

  • 公开/公告号AT194856T

    专利类型

  • 公开/公告日2000-08-15

    原文格式PDF

  • 申请/专利权人 APPLIED MATERIALS INC.;

    申请/专利号AT19940114649T

  • 发明设计人 DILL MICHAEL;MUELLER MARK;

    申请日1994-09-16

  • 分类号C23C14/35;

  • 国家 AT

  • 入库时间 2022-08-22 01:53:49

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