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PROCESS FOR FORMING A SION/TEOS INTERLEVEL DIELECTRIC WITH AFTER-TREATMENT OF THE CVD SILICUM OXYNITRIDE LAYER
PROCESS FOR FORMING A SION/TEOS INTERLEVEL DIELECTRIC WITH AFTER-TREATMENT OF THE CVD SILICUM OXYNITRIDE LAYER
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机译:CVD硅氧氮层处理后形成sion / TEOS介电层的过程
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摘要
An interlevel dielectric including a tetraethyl orthosilicate (TEOS) oxide and a silicon oxynitride (SiON) etch stop layer is formed for use un integrated circuit fabrication. A SiON layer is deposited onto a semiconductor substrate which may include transistors and/or interconnect levels. The SiON layer is heated before deoposition of the TEOS layer. Heating of the SiON layer greatly reduces the number of defects formed during the TEOS deposition. A highly conformal, high-quality interlevel dielectric is thereby formed.
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