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Leading edge blanking circuit and leading edge blanking method
Leading edge blanking circuit and leading edge blanking method
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机译:前沿消隐电路和前沿消隐方法
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摘要
A leading edge blanking circuit has been provided. The LEB circuit (20) includes a minimum number of components for monitoring a gate voltage of a transistor (28) and passing a current sense signal, which senses the current level through the transistor, to subsequent control circuitry (32) when the gate voltage exceeds a predetermined threshold (VLEBTH). Further, the predetermined threshold is chosen to be between the Miller plateau voltage of the transistor and the desired maximum gate voltage.
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