CdTe CRYSTAL OR CdZnTe CRYSTAL AND METHOD FOR PREPARING THE SAME

摘要

A CdTe crystal or CdZnTe crystal exhibiting a reduced value for dislocation density (EPD) and a half width (FWHM) of two crystal X-ray locking curve and containing no deposition of Cd or Te, and a method for preparing the crystal. Such a crystal is prepared by a method in which a CdTe crystal or CdZnTe crystal is generated and the crystal is allowed to stand at a temperature of 700 to 1050 °C, under a pressure of Cd such that the stoichiometry of the crystal at the temperature is held for a time t satisfying the equation 1: {L(r), (L(z))}/2 {4 exp(-1.15/kT)xt}1/2 wherein L(r) and L(z) represent a diameter and a length of the above crystal, respectively, and thereafter the crystal is cooled down in a way such that temperatures of the crystal and a Cd reservoir satisfy the equation 2: -288+1.68xT¿Cd? TCdTe 402+0.76xT¿Cd?