In order to manufacture electrical connection and internal layer, such as bottom diffusion region (103), with good conductivity, positioned at the internal groove (119) of isolation bipolar semiconductor and which for example form the NPN-transistor of electron collector, used in the groove of hole (157). It fills conductive material in the hole, and from surface diffusion region (103) on earth, is in contact with it so that conductive material is in the hole. Hole (157) to use selective etch with the side wall of groove (119). The hole can make simultaneously as metallized contact hole production after be also filled in the metallization step, so as to bottom diffusion region contacts. It can be made into closed groove for the holes lateral PNP-transistor and constitute outer constraint fundamental region, by surrounding transistor. This closed trenches of exterior side wall can be to be inclined by 45 ° such as from top finding, therefore have in too small angle discovery groove without interior corners, what be conducive to fill oxide with.
展开▼
