THE METHOD OF FABRICATION OF SEMICONDUCTING COMPOUNDS OF NITRIDES A 3?B 5? OF p- AND n-TYPE ELECTRIC CONDUCTIVITY

摘要

Subject of the present invention is the method A3B5, such as GaN, AlN for manufacturing nitride-based semiconductor, InN or its solid solution, it is characterised in that p-type or n-type conductivity, high-intensitive and high emission light architecture quality. Semiconductor is obtained by this method to be applied to build luminescent device, the electric current of optical detector and amplifier, such as: efficient blue and violet light therapy unit light emitting diode, laser diode and high-power laser, ultraviolet detector and high temperature field transistor. It is characterized in that following facts according to the method for the present invention, that is,The nitride-based semiconductor A3B5 of homoepitaxy or epitaxially deposited layer is deposited on electrically-conductive backing plate and guides processing or isolated substrate in such a way, hereafter it is 1000-20000 bars that the chamber that the structure so prepared is located at high pressure diffusion, which is filled with one or more multi-component gas and is compressed to pressure, and has annealed and provide in the presence of 1000-1800 °C of temperature of prescribed time is in dopant with external and/or source.