IMPROVED GAPFILL OF SEMICONDUCTOR STRUCTURE USING DOPED SILICATE GLASSES WITH MULTI-STEP DEPOSITION/ANNEAL PROCESS

摘要

The realization that improved notch is filled up in narrow space is by forming doped silicate glasses (231-235) and multistep deposit/annealing process. Doped silicate glasses (231-235) are partly seated in sufficiently high to cause to flow back. Then the silicate glass of part filling doping is annealed causes further to flow back and fill narrow space, reduces the aspect ratio in space. Part deposits and annealing is repeated as many times until the silicate glass of doping reaches required thickness.