SPIN TUNNEL MAGNETO-RESISTANCE EFFECT TYPE MAGNETIC SENSOR AND PRODUCTION METHOD THEREOF

摘要

In the magnetic sensor using a spin tunnel magneto-resistance (TMR), a tunnel insulating film, formed on the one surface of the tunnel insulating the first magnetic layer, second magnetic layer formed on the other side of the tunnel insulating film, for fixing the magnetization of the second magnetic layer a third magnetic layer containing the anti-ferromagnetic material, at least the first and the only the second insulating film, the opening of the second insulating film having an opening in a predetermined area formed on one of the third magnetic layer the first and the one of the third magnetic layer and electrically connected to the the first electrode and has a second electrode to flow the current between the first electrode through the at least one first and second magnetic layer and the first insulating layer.