首页>
外国专利>
MECHANISM FOR UNIFORM ETCHING BY MINIMIZING EFFECTS OF ETCH RATE LOADING
MECHANISM FOR UNIFORM ETCHING BY MINIMIZING EFFECTS OF ETCH RATE LOADING
展开▼
机译:通过最小化刻蚀速率负载的影响来进行均匀刻蚀的机制
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for etching a layer stack structure on a substrate is provided. The method includes a step of etching the layer stack to a predefined stopping point using a reverse etch rate loading inducing chemistry. The method also includes a step of etching said layer stack through a target layer in the layer stack structure using a natural etch rate loading chemistry.
展开▼