CHEMICAL MECHANICAL ABRASIVE COMPOSITION FOR SEMICONDUCTOR INDUSTRY

摘要

PURPOSE: A chemical mechanical abrasive composition is provided, CONSTITUTION: A abrasive composition comprises 70-95 wt% of aqueous medium; 1-25 wt% of a polishing agent; 0.1-20 wt% of a polishing accelerator; optionally 1-15 wt% of an oxidizing agent; optionally 0.05-0.2 wt% of benzotriazole and/or its derivatives; and optionally 0.01-1 wt% of an anionic surfactant. The polishing accelerator comprises a monocarboxyl group- or amido group-containing compound; and optionally nitrate salts. The anionic surfactant is preferably selected from polycarboxylic acids, polycarboxylic acid copolymers, salts thereof, polyacrylic acid copolymers, salts thereof, and mixture thereof. The polishing agent is selected from SiO2, Al2O3, ZrO2, CeO2, SiC, Fe2O3, TiO2, Si3N4 and their mixture. The oxidizing agent is selected from peroxides, chlorates, chlorites, perchlorates, bromates, bromites, perbromates, nitrates and their mixture. The monocarboxyl group-containing compound is formic acid, acetic acid, propionic acid, butyric acid, valeric acid, hexanoic acid, glycolic acid, lactic acid, glycine, sarcosine, dimethylglycine, alanine, salts thereof, or their mixture. The amido group-containing compound is formamide, acetamide, propionamide, N-methylb formamide, N-methyl acetamide, urea, methyl urea, ethyl urea, dimethyl urea or diethyl urea.