HIGH SPEED LOW POWER SIGNAL LINE DRIVER AND SEMICONDUCTOR MEMORY DEVICE USING THEREOF

摘要

A high speed low power signal line driver and a semiconductor memory device using the same are disclosed. The signal line driver includes at least one first pull up portion, at least one second pull up portion, and at least one pull down portion. The first pull-up part is connected between an external power supply voltage node and an output terminal of the signal line driver, and responsive to an input signal swinging between an internal power supply voltage level lower than the external power supply voltage level and a ground voltage level. The output terminal is pulled up to a level dropped by a predetermined voltage from the internal power supply voltage level. The second pull-up unit is connected between the internal power supply voltage node and the output terminal and raises the output terminal to the internal power supply voltage level in response to an inversion signal of the input signal. The pull-down unit is connected between the output terminal and the ground voltage node, and pulls down the output terminal to the ground voltage level in response to an inversion signal of the input signal. The semiconductor memory device includes an input buffer and an output buffer, a data input / output line write driver, an input / output line write driver, a data input / output line read driver, and a memory cell array, wherein at least one of the drivers is the signal. It has the same configuration as the line driver.