MANUFACTURING METHOD OF POLYSILICON THIN FILM USING LASER ANNEALING AND THE MANUFACTURING METHOD OF THIN FILM TRANSISTOR USING THE SAME

摘要

A method of manufacturing a polysilicon thin film and a method of manufacturing a thin film transistor using the same are described. The polysilicon thin film manufacturing method includes the steps of forming an amorphous silicon film on a substrate having a stepped pattern, and irradiating a laser to the amorphous silicon film so that the amorphous silicon film formed at portions except the sidewall portions of the pattern is changed to a polysilicon film. Characterized in that it comprises a step. According to this, a polysilicon thin film capable of suppressing leakage current while maintaining a relatively large ON current without adding another process can be manufactured, and a thin film transistor having improved characteristics can be manufactured using the same.