AN IMPURITY CONCENTRATOR AND A METHOD FOR CONCENTRATING IMPURITY, AN IMPURITY ANALYZER AND A METHOD FOR ANALYZING IMPURITY

摘要

The present invention provides a method for concentrating impurities contained in a semiconductor crystal sample 11 by repeatedly irradiating a predetermined position of the semiconductor crystal sample 11 with a laser beam having a predetermined intensity by the laser oscillator 13. do. The present invention also provides a method for analyzing impurities contained in an impurity concentration region of the semiconductor crystal sample 11 with high sensitivity by predetermined physical analysis means. According to the demand, the method of the present invention forms an insulating film such as an oxide film and then concentrates the impurities by the laser light by irradiating the laser light onto the surface of the semiconductor crystal sample. At the same time, the present invention provides a concentration apparatus and an analysis apparatus using these concentration methods and analysis methods.