METHOD FOR ANALYZING IMPURITY IN SEMICONDUCTOR SAMPLE, AND IMPURITY CONCENTRATOR OF SEMICONDUCTOR SAMPLE

摘要

PROBLEM TO BE SOLVED: To provide an analysis method for determining metal impurities in a semiconductor thin film containing germanium.;SOLUTION: A solvent L comprising a hydrofluoric acid and a nitric acid is supplied from a solvent supply nozzle 7 onto the surface of an Si-Ge semiconductor sample 5 for etching the surface of the semiconductor sample 5. The etching liquid L is heated for dissolving a dried substance S where an Si constituent is volatilized by a hydrochloric acid supplied from a nozzle 9, and a melt is heated to remove germanium and to create a measurement sample. Since Si and Ge have been removed from the measurement sample, the other impurity elements can be measured by ICP-MS or the like.;COPYRIGHT: (C)2004,JPO