首页> 外国专利> CIRCUIT FOR ZERO-RUN DEVELOPING RUN/LEVEL SETS AND METHOD FOR ZERO-RUN DEVELOPING THE SAME

CIRCUIT FOR ZERO-RUN DEVELOPING RUN/LEVEL SETS AND METHOD FOR ZERO-RUN DEVELOPING THE SAME

机译:用于零运行开发运行/水平集的电路和用于零运行开发相同/零集的方法

摘要

Each run-length signal has a level of non-zero data value, and the first non-zero of the block of the predetermined number of run-length signals, in which a run of the number of zero-data connected to the non-zero data is disclosed. A zero-run develpping circuit for performing a zero-run develpping process to place a zero represented by a run between the data and the second zero-run data; A latch circuit for latching a predetermined number of non-zero data levels, a first write position generating circuit for generating a first latch position of the latch circuit, in which the first non-zero data is written in response to the first run length signal; And a second write position generating circuit for generating a second latch position of the latch circuit, in which the second non-zero data is written in correspondence with the first run length signal and the second run length signal.
机译:每个游程长度信号具有非零数据值的电平,并且具有预定数目的游程长度信号的块的第一个非零,其中,将零个数据游程连接到非零游程长度信号。公开了零数据。零行程消除电路,用于执行零行程消除过程,以将由行程表示的零放置在数据和第二零行程数据之间;用于锁存预定数量的非零数据电平的锁存电路,用于生成锁存电路的第一锁存位置的第一写位置生成电路,其中响应于第一游程长度信号写入第一非零数据;第二写入位置产生电路,用于产生锁存电路的第二锁存位置,其中与第一游程长度信号和第二游程长度信号相对应地写入第二非零数据。

著录项

  • 公开/公告号KR100255062B1

    专利类型

  • 公开/公告日2000-05-01

    原文格式PDF

  • 申请/专利权人 NEC CORPORATION;

    申请/专利号KR19960004089

  • 申请日1996-02-21

  • 分类号H04N7/52;

  • 国家 KR

  • 入库时间 2022-08-22 01:44:49

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