METHOD FOR PRODUCING A VOLCANO-TYPE METAL FIELD EMITTER ARRAY OF FED7351 H01J 17/49

摘要

PURPOSE: A method for forming crater type metal field emitter array is provided to minimize pollution of electron emission source and to make lower voltage operation of device possible by manufacturing self-aligned crater type field emitter array using CMP process. CONSTITUTION: A polysilicon to be used as gate line(13) is deposited in a designated thickness on the top of silicon substrate(11). Silicon nitrification film(15) is formed on the top of above gate line(13). Polysilicon(17) to form emitter on the top of silicon nitrification film is made an in-situ doping and is deposited. Hole of a designated size is formed by etching polysilicon to form above emitter. Proper type emitter is formed by oxidizing above polysilicon. Lower part is exposed to be polysilicon layer for forming gate line by making dry etching silicon nitrification film. Gate metal is deposited in a designated thickness on the top of whole structure. Emitter tip is formed by removing material of the top of gate line(21) using CMP process. Tip is protruded by removing oxidation film(19) around emitter tip.