首页> 外国专利> SPIN VALVE MAGNETORESISTIVE SENSOR WITH ANTIPARALLEL PINNED LAYER AND IMPROVED BIAS LAYER, AND MAGNETIC RECORDING SYSTEM USING THE SENSOR

SPIN VALVE MAGNETORESISTIVE SENSOR WITH ANTIPARALLEL PINNED LAYER AND IMPROVED BIAS LAYER, AND MAGNETIC RECORDING SYSTEM USING THE SENSOR

机译:具有反平行钉扎层和改进的偏置层的自旋阀磁致电阻传感器,以及使用该传感器的磁记录系统

摘要

Spin Valve Magneto Resistive (SVMR) sensors use laminated antiparallel (AP) layers that combine with an improved antiferromagnetic (AF) exchange bias layer. The restraint layer includes two ferromagnetic layers separated by a nonmagnetic coupling layer, so that the magnetization of the two ferromagnetic layers is anti-parallel, thereby being strongly coupled to each other by antiferromagnetic properties. This laminate AP confinement layer is magnetically fixed to the small field excitation required to rotate the free layer of the SVMR sensor. The magnetic moments of the two ferromagnetic layers in this AP confinement layer are almost the same and the net magnetic moment of the bonding layer is small. However, the magnetic field is large in correspondence because it is inversely proportional to the net magnetic moment. The laminate restraint layer has a degree of magnetism that is either fixed or bonded by an AF material that is corrosion resistant but has too low Exchange Anisotropy and cannot be used in conventional SVMR sensors. In an embodiment, the AF layer is nickel-oxide and is formed on any one of magnetoresistive (MR) shields serving as a substrate. Therefore, the AF material also serves as an insulating MR gap material. The position of the laminate AP confinement layer, which is exchange coupled on the bottom surface of the AF layer and the SVMR sensor, allows the free layer to achieve an improved vertical bias when the SVMR sensor is fabricated.
机译:自旋阀磁阻(SVMR)传感器使用层压的反平行(AP)层和改进的反铁磁(AF)交换偏压层。约束层包括由非磁性耦合层隔开的两个铁磁层,从而两个铁磁层的磁化反平行,从而通过反铁磁特性彼此牢固地耦合。该层压AP限制层磁性固定在旋转SVMR传感器的自由层所需的小场激励上。该AP限制层中的两个铁磁层的磁矩几乎相同,并且接合层的净磁矩较小。但是,磁场相应地较大,因为它与净磁矩成反比。叠层约束层的磁性程度是由耐腐蚀但交换各向异性过低的AF材料固定或粘结的,不能用于常规SVMR传感器中。在一个实施例中,AF层是氧化镍并且形成在用作衬底的磁阻(MR)屏蔽中的任何一个上。因此,AF材料还用作绝缘MR间隙材料。在AF层和SVMR传感器的底面上交换耦合的层压AP限制层的位置允许自由层在制造SVMR传感器时实现改善的垂直偏置。

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