SEMICONDUCTOR DEVICE FOR SOI STRUCTURE HAVING LEAD CONDUCTOR SUITABLE FOR FINE PATTERNING

摘要

The present invention relates to a semiconductor device having a silicon on insulator (SOI) structure in which soft errors are less likely to occur. A semiconductor layer formed on an insulating substrate and having a major surface, the first layer having a plurality of semiconductor regions therein defined to be bonded to each other to form at least two homogeneous PN junctions, the junction being perpendicular to the insulating substrate; Extending in the direction and ending at the main surface of the semiconductor layer, the plurality of semiconductor regions constitute the main surface, each of the plurality of semiconductor regions having a width in a second direction parallel to the insulating substrate, and the first semiconductor region being the semiconductor layer. Has an extension region on the major surface of the first semiconductor region, the width of the major surface extension region of the first semiconductor region is larger than the width under the extension region of the first semiconductor region, and the second semiconductor region is bonded to the first semiconductor region and A semiconductor layer having an end surface constituting the end portion; A first lead conductor in contact with a first semiconductor region at a major surface of the semiconductor layer for electrical connection therebetween, comprising at least a first conductor layer and a second conductor layer, wherein the first conductor layer is formed of the first semiconductor region. Extends perpendicularly to the extension region while in physical and electrical contact with the extension region, the contact area between the first conductor layer and the extension region of the first semiconductor region is smaller than that of the major surface extension region of the semiconductor layer, and the second conductor A first lead conductor, wherein the layer extends over a portion of the semiconductor layer defining at least one of semiconductor regions other than the first semiconductor region; A second lead conductor in contact with the second semiconductor region at one end; The structure is provided on the second semiconductor region and has an end portion thereof that matches the end surface of the second semiconductor region, and includes an insulating film separating the first lead conductor and the second lead conductor.;As a result, the active region of the transistor can be miniaturized without being limited by the limitation of the pattern size of the electrode of the transistor, so that a transistor can be formed at high speed and hardly generate soft errors, and the pattern of the low concentration collector region can be greatly increased. By setting it, there exists an effect that a transistor with a high breakdown voltage can be comprised easily.