Semiconductors - component with at least one zener diode and at least one schottky - diode is connected in parallel thereto and method for producing the semiconductor components -

摘要

A semiconductor - component (1a) has a highly doped substrate (4) of a first dopant type in which in some regions, a highly doped layer (15) of a second dopant type for the formation of a pn - zener via gear (16) is introduced and are derived from this highly doped layer (15) in the substrate (4) in the epitaxial layer (5) a low doped region (17) of the second dopant type up to the surface of the epitaxial layer (5) extends. On the substrate (4) facing away from the side of the epitaxial layer (5) is a the low-dope, diffused-in region (17) extending at least partially covers (11) is applied to the formation of a schottky - transition (18) between this region (17) and the extending (11) and a further schottky - transition (13) between the extending and the epitaxial layer (5). Dollars a result of the series circuit of oppositely poled zener diode - and - schottky diode, a low temperature coefficient is achieved. In addition, by means of the in the flow direction of the zener diode - which is poled to the series circuit of the zener - diode and the first schottky - diode connected in parallel - schottky diode, a low forward voltage is achieved.