Determining recombinant life duration of metal-insulator-semiconductor structures used as important control parameter with development and monitoring of silicon based semiconductor materials and technologies

摘要

The method is carried out so that the effective initial bias voltage of a field-induced pn-transition is achieved with predominant recombination as the alteration of a surface strip bending, according to a given equation. The method is carried out so that the effective initial bias voltage of a field-induced pn-transition results in a non-stationary non-balanced condition with predominant recombination as an alteration of the surface strip bending related to its balanced weight in inversion, extracted according to a given equation. The recombination current, belonging to this initial loading, is determined by means of corresponding value pairs of high frequency gate capacitance and gate current according to another given equation. The extraction of the recombination life duration results from the graph of recombination current versus effective initial bias voltage of the field induced pn-transition, derived from the solution of a further given equation.