首页> 外国专利> Local clock signal generation circuit for semiconductor memory element uses phase mixers receiving signals from different points along internal clock signal line for providing respective local clock signals

Local clock signal generation circuit for semiconductor memory element uses phase mixers receiving signals from different points along internal clock signal line for providing respective local clock signals

机译:用于半导体存储元件的本地时钟信号生成电路使用相位混合器,该相位混合器沿着内部时钟信号线从不同点接收信号,以提供相应的本地时钟信号

摘要

The circuit uses an internal clock signal circuit (100) for providing an internal clock signal (ICLK), synchronized with an external clock signal (ECLK), which is fed to a clock signal line (130) for supplying the internal clock signal to a number of internal circuits (120-128). A number of phase mixers (110a-110i) receive the signals from 2 points along the clock signal line for providing a number of local clock signals (LCLK0-LCLK8). Also included are Independent claims for the following; (a) a semiconductor memory element; and (b) a local clock signal generation method.
机译:该电路使用内部时钟信号电路(100)提供与内部时钟信号(ECLK)同步的内部时钟信号(ICLK),该信号被馈送到时钟信号线(130),以将内部时钟信号提供给时钟内部电路数(120-128)。多个相位混合器(110a-110i)沿时钟信号线从2个点接收信号,以提供多个本地时钟信号(LCLK0-LCLK8)。还包括以下方面的独立权利要求: (a)半导体存储元件; (b)本地时钟信号产生方法。

著录项

  • 公开/公告号DE19928271A1

    专利类型

  • 公开/公告日2000-06-21

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD. SUWON;

    申请/专利号DE19991028271

  • 发明设计人 LEE DONG-YUN;

    申请日1999-06-21

  • 分类号G11C7/00;

  • 国家 DE

  • 入库时间 2022-08-22 01:42:07

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