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Semiconductor device has an electrode or wiring layer of a thick aluminum layer below a nickel layer to prevent an aluminum-nickel intermetallic compound from reaching the underlying substrate
Semiconductor device has an electrode or wiring layer of a thick aluminum layer below a nickel layer to prevent an aluminum-nickel intermetallic compound from reaching the underlying substrate
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机译:半导体器件在镍层下方具有厚铝层的电极或布线层,以防止铝镍金属间化合物到达下面的衬底
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摘要
A semiconductor device has an aluminum-based metal layer which is much thicker than an overlying nickel-based metal layer. A semiconductor device comprises a semiconductor substrate bearing an aluminum-based metal layer which is at least 5 times thicker than an overlying nickel-based metal layer. A solder is applied onto the nickel-based layer.
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