首页> 外国专利> Semiconductor device has an electrode or wiring layer of a thick aluminum layer below a nickel layer to prevent an aluminum-nickel intermetallic compound from reaching the underlying substrate

Semiconductor device has an electrode or wiring layer of a thick aluminum layer below a nickel layer to prevent an aluminum-nickel intermetallic compound from reaching the underlying substrate

机译:半导体器件在镍层下方具有厚铝层的电极或布线层,以防止铝镍金属间化合物到达下面的衬底

摘要

A semiconductor device has an aluminum-based metal layer which is much thicker than an overlying nickel-based metal layer. A semiconductor device comprises a semiconductor substrate bearing an aluminum-based metal layer which is at least 5 times thicker than an overlying nickel-based metal layer. A solder is applied onto the nickel-based layer.
机译:半导体器件具有铝基金属层,该铝基金属层比上面的镍基金属层厚得多。半导体器件包括带有铝基金属层的半导体衬底,该铝基金属层的厚度至少是上面的镍基金属层的5倍。将焊料施加到镍基层上。

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