Low voltage MOS gate controlled semiconductor component, useful for a direct voltage/direct voltage converter, employs planar strip technology and has a minimal power index

摘要

A MOS gate controlled semiconductor component having gate strips (61) lying over invertible channel region pairs formed by source diffusions (81) in parallel spaced-apart base strip diffusions (80) is new. A semiconductor component with MOS gate control comprises a silicon wafer with an upper first conductivity type layer (52) accommodating boundary layers. Parallel spaced-apart second conductivity type base strip diffusions (80) are formed in the upper surface of the layer (52) and first conductivity type source diffusions (81) are formed in and extend over the same length as the base strip diffusions (80) to form invertible channel regions (82) along the sides of each of the base strip diffusions (80). Gate strips, comprising gate oxide strips covered by conductive polysilicon strips (61), lie over spaced-apart pairs of adjacent invertible channel regions (82) and the space between their respective base diffusions (80). Independent claims are also included for the following: (i) a process for producing the above component; and (II) a d.c./d.c. converter circuit employing components as described above.