A high-purity titanium sputtering target having controlled crystal characteristics. Uniformity problem of film thickness distribution on a substrate can be solved by adopting requirements of that (a) the average crystal grain diameters at various portions of the sputtering surface of the target are 500 mu m or less, preferably 100 mu m or less, and their dispersions are within +/- 20%, and (b) the defined orientation content ratios A have dispersions within+/- 20% and (c) a Ti target crystal structure has a recrystallization structure. The problems in connection with particle generation and lowered film forming rate in collimation sputtering can be solved by adopting the requirements that (d) said orientation content ratios A have is 80% or less, preferably 50% or less, and (e) the defined orientation content ratios B are 20% or less, as necessary, in combination with the aforementioned (a) to (c) requirements.
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