Composite structure for electronic power components including cooling system, comprising channels for passage of coolant in lower conductor or semiconductor layer

摘要

Composite structure comprises lower conductor or semiconductor layer (10) resting on a basic platform, an intermediate insulator layer (16), and upper conductor or semiconductor layer (18) supporting a semiconductor power circuit (20). The lower layer (10) is with channels (12) for the passage of coolant, formed by matching grooves (8,12) in two plates (2,4) forming the lower layer. The semiconductor power circuit (20) is with plots or pads (26) for connection to wires (24). The cross-section of channel (12) is hexagonal and its height is about equal to its width. In the case of conductor-insulator-conductor structure, the lower layer is with a set of ducts of width in the range 50-300 microns , preferred 150-250 microns . The conductor layer is metallic and made of e.g. copper. In the case of semiconductor-insulator-semiconductor structure, the grooves (8,12) have inclined sides according to crystal structure planes of the semiconductor material. The angle between sides is about 57 deg . The grooves are made by etching, and the plates are joined by soldering. The lower layer (10) is made of monocrystalline silicon. The basic platform contains ducts for input and output of coolant, which can be liquid as e.g. water, or gaseous.