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Split sense amplifier and staging buffer for wide memory architecture

机译:分离式读出放大器和分级缓冲器,适用于宽存储架构

摘要

In an amplifier design for a wide memory architecture, a staging buffer can be integrated with the final stage of a multi-stage sense amplifier. The staging buffer includes a memory latch for storing at least one bit of data. The data is transferred into the staging buffer from memory upon strobing at least one read enable line, and transferred from the staging buffer to a data bus upon strobing at least one write enable line. The data signal is transferred from the memory to the staging buffer at a voltage level lower than the full swing voltage level. The memory architecture produced using this design technique allows for a much lower voltage swing on all of the data lines, thus lowering the power requirements of the circuit.
机译:在用于宽存储器架构的放大器设计中,可以将分级缓冲器与多级读出放大器的末级集成在一起。登台缓冲器包括用于存储至少一位数据的存储器锁存器。选通至少一条读取使能线时,将数据从存储器传送到分级缓冲器中,选通至少一条写入使能线时,将数据从分级缓冲器传送到数据总线中。数据信号以低于全摆幅电压电平的电压电平从存储器传输到分级缓冲器。使用这种设计技术生产的存储器架构允许所有数据线上的电压摆幅低得多,从而降低了电路的功耗要求。

著录项

  • 公开/公告号US5991209A

    专利类型

  • 公开/公告日1999-11-23

    原文格式PDF

  • 申请/专利权人 RAYTHEON COMPANY;

    申请/专利号US19970827856

  • 发明设计人 LAP-WAI CHOW;

    申请日1997-04-11

  • 分类号G11C16/04;

  • 国家 US

  • 入库时间 2022-08-22 01:39:02

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