Low power rectifier circuit for implantable medical device

摘要

A low power switched rectifier circuit is realized using P-MOS and N- MOS FET switches that are turned ON/OFF at just the right time by a detector and inverter circuit (which form an integral part of the rectifier circuit) to rectify an incoming ac signal in a highly efficient manner. Parasitic diodes and transistors that form an integral part of the FET circuitry respond to and rectify the incoming signal during start up, i.e., when no supply voltage is yet present, thereby providing sufficient operating voltage for the FET switches to begin to perform their intended rectifying function. In the absence of an incoming ac signal, i.e., during the time between biphasic pulses, the rectifier circuit is biased with an extremely small static bias current; but in the presence of an incoming ac signal, at a time when the positive and negative phases of the incoming signal are to be connected to positive and negative supply lines, a much larger dynamic bias current is automatically triggered.