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Method for growing an epitaxial layer of material using a high temperature initial growth phase and a low temperature bulk growth phase
Method for growing an epitaxial layer of material using a high temperature initial growth phase and a low temperature bulk growth phase
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机译:使用高温初始生长阶段和低温本体生长阶段生长材料的外延层的方法
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摘要
A method for forming a trench transistor structure begins by forming a buried layers (12 and 16) and a doped well (22) in a substrate (10) via epitaxial growth processing. A trench region (24) is then etched into the substrate (10) to expose a the layer (12). A conductive sidewall spacer (28) is formed within the trench (24) as a gate electrode. The spacer (28) gates a first transistor (12, 28, 32) located adjacent a first half of the trench (24) and a second transistor (12, 28, 34) located adjacent a second half of the trench (24). Region (12) is a common electrode wherein the channel regions of both the first and second transistor are coupled in a serial manner through the region (12).
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