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Complementary metal-oxide semiconductor voltage controlled oscillator (CMOS VCO)

机译:互补金属氧化物半导体压控振荡器(CMOS VCO)

摘要

An integrated circuit complementary metal-oxide silicon (CMOS) voltage controlled oscillator (VCO) includes a plurality of variable delay elements, connected in a ring configuration, each variable delay element including a pair of parallel connected differential CMOS sections. The parallel-connected differential CMOS sections of each variable delay element are controlled by a differential control voltage whose magnitude sets relative levels of operation of the two differential sections of each variable delay element. These relative levels of operation determine the delay through the variable delay element. A current mirror circuit provides the differential control voltage.
机译:集成电路互补金属氧化物硅(CMOS)压控振荡器(VCO)包括以环形配置连接的多个可变延迟元件,每个可变延迟元件包括一对并联连接的差分CMOS部分。每个可变延迟元件的并联连接的差分CMOS部分由差分控制电压控制,该差分控制电压的大小设置每个可变延迟元件的两个差分部分的相对工作水平。这些相对的操作水平确定了通过可变延迟元件的延迟。电流镜电路提供差分控制电压。

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