Component of protection of an integrated MOS power transistor against voltage gradients

摘要

The present invention relate to a device of protection against voltage gradients of a monolithic component including a vertical MOS power transistor and logic circuits. The protection circuit has an N- type substrate corresponding to the drain of the MOS transistor, and logic components being realized in at least one P-type well formed in the upper surface of the substrate. Each of the N-type regions connected to the ground of the logic circuit, or to a node of low impedance with respect to the ground, is in series with a resistor.