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Method and arrangement for the response analysis of semiconductor materials with optical excitation
Method and arrangement for the response analysis of semiconductor materials with optical excitation
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机译:半导体材料光激发响应分析的方法和装置
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摘要
The invention is directed to a method and an arrangement for the response analysis of semiconductor materials with optical excitation. The object of the invention, to find a new type of response analysis of semiconductor materials with optical excitation which also allows a sufficiently precise detection of the charge carrier wave with a higher excitation output and a shorter charge carrier lifetime, is met according to the invention in that an exciting laser beam is intensity- modulated with two discrete modulation frequencies (&OHgr;.sub.1 ; . OMEGA..sub.2), the luminescent light exiting from the object is measured on the difference frequency (&OHgr;.sub.1 -&OHgr;.sub.2), and the luminescent light is analyzed as a function of the arithmetic mean (. OMEGA.) of the modulation frequencies (&OHgr;.sub.1 ; &OHgr;.sub.2). The invention is applied in the semiconductor industry for determining different electrical parameters of semiconductor materials.
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机译:本发明涉及用于利用光激发对半导体材料进行响应分析的方法和装置。发明内容本发明的目的是找到一种新型的具有光激发的半导体材料的响应分析,其还能够以更高的激发输出和更短的载流子寿命来足够精确地检测载流子。因为激发的激光束以两个离散的调制频率(&OHgr; sub.1; OMEGA.sub.2)进行强度调制,所以从物体发出的发光光是在差频(&OHgr; sub .1--OHgr.sub.2),并且根据调制频率(&OHgr; sub.1;&OHgr; sub.2)的算术平均值(OMEGA。)来分析发光光。本发明在半导体工业中用于确定半导体材料的不同电参数。
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