首页> 外国专利> Method for forming a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with transversely magnetically biased soft adjacent layer (SAL)

Method for forming a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with transversely magnetically biased soft adjacent layer (SAL)

机译:具有横向磁偏置的软相邻层(SAL)的软相邻层(SAL)磁阻(MR)传感器元件的形成方法

摘要

A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer. The invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed with the magnetoresistive (MR) layer interposed between the substrate and the soft adjacent layer (SAL). Similarly, the invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element employing a transverse magnetic biasing layer formed of a hard bias permanent magnet material.
机译:一种用于制造软相邻层(SAL)磁阻(MR)传感器元件的方法以及可以使用该方法制造的多个软相邻层(SAL)磁阻(MR)传感器元件。首先提供基板。在衬底上方形成电介质层,其中电介质层具有电介质层的第一表面和与电介质层的第一表面相对的电介质层的第二表面。在衬底上方还形成与电介质层的第一表面接触的磁阻(MR)层。在衬底上方还形成软相邻层(SAL),其中,软相邻层(SAL)具有软相邻层(SAL)的第一表面和软相邻层(SAL)的第二表面。软相邻层(SAL)的第一表面接触电介质层的第二表面。最后,还在衬底上形成横向磁偏置层,其中横向磁偏置层接触软相邻层(SAL)的第二表面,并且介电层,磁阻(MR)层中的至少一个柔性相邻层(SAL)和横向磁偏置层是采用蚀刻掩模形成的图案化层,该蚀刻掩模用作剥离模板,以形成邻接图案化层的边缘的图案化第二介电层。本发明还考虑了一种软相邻层(SAL)磁阻(MR)传感器元件,该传感器元件的磁阻(MR)层插入在衬底和软相邻层(SAL)之间。类似地,本发明还考虑采用由硬偏置永磁材料形成的横向偏置层的软相邻层(SAL)磁阻(MR)传感器元件。

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