Process of fabricating semiconductor device having ashing step for photo- resist mask in plasma produced from N.sub.x H.sub.y gas

摘要

A photo-resist mask is removed from an inter-level insulating structure by using plasma produced from N.sub.x H.sub.y gas, and the plasma does not make an organic insulating layer forming part of the inter-level insulating structure hygroscopic, because SiCH.sub.3 bond is never replaced with Si--OH bond during the removal of the photo-resist mask.