Semiconductor heterostructure radiation detector having two spectral sensitivity ranges

摘要

A semiconductor heterostructure radiation detector has two adjacent semicuctor layer regions sensitive in different spectral ranges, in which photons having different energies respectively can be absorbed, optically exciting charge carriers present therein. A photo current can be generated in the respective semiconductor layer regions in response to an external electric voltage applied via electrodes provided at the semiconductor heterostructure. One of the semiconductor regions is a photodiode, while the other is a quantum well intersubband photodetector.