SEMICONDUCTOR HETEROSTRUCTURE RADIATION DETECTOR HAVING TWO SPECTRAL SENSITIVITY RANGES

摘要

Disclosed is a semiconductor heterostructure radiationdetector leaving two adjacent semiconductor layer regionssensitive in different spectral ranges, in which regionsphotons having different energies respectively can beabsorbed, which photons optically excite charge carrierspresent in the semiconductor layer regions in such a mannerthat a photo current can be generated in the respectivesemiconductor layer regions in dependence on an externalelectric voltage applied via electrodes provided at thesemiconductor heterostructure.The present invention is distinguished by the fact that theone semiconductor region is a photodiode and the other aquantum well intersubband photodetector.