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Wafer film thickness measuring device, wafer film thickness measurement method and wafer polishing apparatus

机译:晶片膜厚测定装置,晶片膜厚测定方法及晶片研磨装置

摘要

PURPOSE: To provide a device and a method for measuring wafer film thickness and a wafer polishing device allowing high-accuracy film thickness measurement with an in-process during wafer polishing. ;CONSTITUTION: Provided are a light interference type film thickness measuring mechanism 24 for irradiating light emitted from a light irradiating part at the lower surface of a wafer held by means of a wafer-holding head and for receiving reflected light for film thickness measurement, and a cleaning mechanism 26 provided between the light irradiating part and the lower surface of the wafer. The cleaning mechanism 26 is provided with a cleaning solution vessel 27 having an opening at its upper surface and positioned nearby the lower surface of the wafer, a light-transmitting part 50 formed in the bottom part 48 of the vessel 27, a wafer-cleaning nozzle 40 for spraying the cleaning solution at a measuring place on the lower surface of the wafer, a light- transmitting part cleaning nozzle 44 for spraying the cleaning solution at the light-transmitting part 50, and cleaning solution supplying means for supplying the cleaning solution to them.;COPYRIGHT: (C)1995,JPO
机译:目的:提供一种用于测量晶片膜厚的装置和方法,以及一种晶片抛光装置,其允许在晶片抛光过程中进行高精度的膜厚测量。组成:提供了一种光干涉型膜厚测量机构24,该机构用于将从光照射部分发射的光照射在借助于晶片保持头保持的晶片的下表面上,并接收反射光以进行膜厚测量,以及清洁机构26设置在光照射部分与晶片的下表面之间。清洁机构26设置有清洁溶液容器27,该清洁溶液容器27在其上表面具有开口并且位于晶片的下表面附近;透光部分50形成在容器27的底部48中;晶片清洁在晶片的下表面的测定部位喷出清洗液的喷嘴40,在透光部50喷出清洗液的透光部清洗喷嘴44,以及供给清洗液的清洗液供给单元。给他们。;版权:(C)1995,日本特许厅

著录项

  • 公开/公告号JP3218881B2

    专利类型

  • 公开/公告日2001-10-15

    原文格式PDF

  • 申请/专利权人 三菱マテリアル株式会社;

    申请/专利号JP19940222265

  • 发明设计人 茂木 克己;遠藤 修;

    申请日1994-09-16

  • 分类号G01B11/06;B24B37/04;B24B49/12;G01B11/02;H01L21/304;

  • 国家 JP

  • 入库时间 2022-08-22 01:35:24

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