Production method of GaAs-based semiconductor laser

摘要

PROBLEM TO BE SOLVED: To provide a process where a passivation layer is formed at a facet by, when an inductive layer is deposited, allowing a cleavage plane to be exposed to specific plasma in a deposition chamber, so that the inductive layer is deposited on the cleavage face, without exposing a laser bar to the atmosphere. ;SOLUTION: After completion of manufacturing a multi-layer ware which was mesa-etched and metalized, a line is engraved in the surface of wave, so that individual semiconductor chip is regulated (110), to be cleaved along surface, thus defining a laser bar. Then after a jig with the laser bar mounted is assigned in a reactive chamber, the inside of the chamber is evacuated to 10^-3Torr or below, and the laser bar exposed to passivation plasma of H₂S. Hydrogen in the plasma removes inherent oxide from a facet surface, and sulfur in the plasma combines to Ga and As, thus a surface state density of the facet decreases. After exposed to H₂S plasma, a protective inductive layer is deposited on the facet.;COPYRIGHT: (C)1998,JPO