The semiconductor equipment null which is produced with minute pattern formation manner, the production manner and the said manner

摘要

PROBLEM TO BE SOLVED: To control a minute pattern shape accurately by a simple method by forming the pattern for adjusting the etching speed by controlling the consumption speed of reaction species within a mask pattern in the vicinity of a pattern for obtaining the desired shape. ;SOLUTION: On electronic beam resist, which is applied on an InP substrate, a diffraction grating pattern having the irregular structure is formed in a stripe shaped region by electron-beam exposure, and an etching region I is formed. Furthermore, etching regions II for controlling the etching speed are formed at both sides of the etching region I. When etching is performed by using the mask pattern such as this and using HBr-based enchant, the etching speed is controlled. The etching speed can be made uniform in the pattern of diffraction grating. As a result, the diffraction grating structure having the uniform depth is manufactured. Thus, the minute pattern can be manufactured with excellent uniformity.;COPYRIGHT: (C)1999,JPO