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Method of manufacturing an integrated-type amorphous semiconductor solar cell and an integrated-type amorphous semiconductor solar cell

机译:集成型非晶半导体太阳能电池的制造方法以及集成型非晶半导体太阳能电池

摘要

PROBLEM TO BE SOLVED: To provide an integrated amorphous solar cell which is easy to manufacture and excellent in cell characteristic in an integrated amorphous solar cell which is designed to convert incident light from the opposite side to a board to electric energy. ;SOLUTION: Rear surface electrode layers 22a and 22b, amorphous semiconductor layers 23a and 23b and transparent electrode layers 24a and 24b are laminated on a board in this order, thereby forming an optical electromotive force cell. They are cut at a cutting area 31 at the same location so that they may be separated into a plurality of division cells 30a and 30b, thereby forming a rear surface electrode exposed area 32b by removing partially the amorphous semiconductor layer 23b and the transparent electrode layer 24b. A convergence electrode 26a is provided on the transparent electrode layer 24a of the division cell 30. This convergence electrode 26a is electrically connected to the rear surface electrode exposed area 32b of the adjacent division cell 30b.;COPYRIGHT: (C)1997,JPO
机译:解决的问题:提供一种集成的非晶太阳能电池,该集成的非晶太阳能电池易于制造并且在集成非晶太阳能电池中具有出色的电池特性,该集成非晶太阳能电池设计用于将入射光从另一侧转换为板,转换为电能。 ;解决方案:将背面电极层22a和22b,非晶半导体层23a和23b以及透明电极层24a和24b依次层叠在板上,从而形成一个光学电动势单元。它们在相同位置的切割区域31处被切割,使得它们可以被分成多个分割单元30a和30b,从而通过部分地去除非晶半导体层23b和透明电极层而形成背面电极暴露区域32b。 24b。会聚电极26a设置在分割单元30的透明电极层24a上。该会聚电极26a电连接至相邻的分割单元30b的背面电极露出区域32b。版权所有:(C)1997,JPO

著录项

  • 公开/公告号JP3155459B2

    专利类型

  • 公开/公告日2001-04-09

    原文格式PDF

  • 申请/专利权人 三洋電機株式会社;

    申请/专利号JP19960072815

  • 发明设计人 磯村 雅夫;寺川 朗;

    申请日1996-03-27

  • 分类号H01L31/04;

  • 国家 JP

  • 入库时间 2022-08-22 01:34:29

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