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Planer magnetron spatter device null for ITO thin film formation

机译:平面磁控溅射装置无效,用于ITO薄膜的形成

摘要

PURPOSE: To acquire a device which can improve use efficiency of a target greatly and form a transparent conductive thin film of good quality having high electric conduction by constituting a poloidal field generation means of a specific central magnet, outside magnet and auxiliary magnet. ;CONSTITUTION: A poloidal field generation means is provided with a long and slender central magnet 12 which is positioned along a longitudinal central axis of a target 17 and parallel therewith and a long annular outside magnet 13 which is provided to enclose a periphery of the central magnet 12 and has a polarity opposite to that of the central magnet 12. It is also provided with at least one of auxiliary magnets 14, 15 which are positioned between the central magnet 12 and the outside magnet 13 along the magnets 12, 13 and control a magnetic field so that distribution of a vertical magnetic field element in a surface parallel with the target 17 inside each cross section of a magnetic field formed near the target 17 passes through a zero level three times. The auxiliary magnet 14 arranged adjacent to the central magnet 12 is made to have a polarity which is opposite to that of the central magnet 12.;COPYRIGHT: (C)1994,JPO&Japio
机译:目的:获得一种装置,该装置通过构成特定的中央磁体,外部磁体和辅助磁体的极场产生装置,可以大大提高靶材的使用效率并形成具有高导电性的高质量透明导电薄膜。组成:极向场产生装置设有一个细长的中心磁体12,该磁体沿靶17的纵向中心轴线定位并与其平行;还有一个长的环形外部磁体13,其设置为包围中心的外围磁体12的极性与中心磁体12的极性相反。它还设有辅助磁体14、15中的至少一个,它们沿着磁体12、13和控制装置位于中心磁体12和外部磁体13之间。因此,在靶17附近形成的磁场的每个截面内,与靶17平行的表面中的垂直磁场元件的分布通过零级3次。与中心磁体12相邻布置的辅助磁体14被制成具有与中心磁体12相反的极性。版权所有:(C)1994,JPO&Japio

著录项

  • 公开/公告号JP3204527B2

    专利类型

  • 公开/公告日2001-09-04

    原文格式PDF

  • 申请/专利权人 日本真空技術株式会社;

    申请/专利号JP19920050918

  • 发明设计人 諏訪 秀則;塚越 修;

    申请日1992-03-09

  • 分类号H01L21/203;C23C14/35;

  • 国家 JP

  • 入库时间 2022-08-22 01:33:30

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