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Layered structure including single crystal made of silicon carbide, method for forming the single crystal, and process for forming carbide on substrate
Layered structure including single crystal made of silicon carbide, method for forming the single crystal, and process for forming carbide on substrate
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机译:包括由碳化硅制成的单晶的层状结构,形成单晶的方法以及在基板上形成碳化物的方法
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摘要
A structure is fabricated comprising a substrate, a dielectric layer formed over the substrate, and a single crystal layer of a compound formed over the dielectric layer. The single crystal layer is formed by the chemical reaction of at least a first element with an initial single crystal layer of a second element on the dielectric layer having an initial thickness of about 100 to about 10,000 angstroms. According to another aspect, a carbide single crystal layer is provided on a substrate by depositing carbon from a solid carbon source at a low rate and low temperature, followed by reacting the carbon with the underlying layer to convert it to the carbide.
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