NiSi TARGET MATERIAL, TARGET, PRODUCING METHOD FOR NiSi TARGET, NiSi THIN FILM, PRODUCING METHOD THEREFOR AND THIN FILM ELEMENT

摘要

PROBLEM TO BE SOLVED: To produce a target material in which the amount of catalytic metals to be intruded is controlled, to form a target using the same, to provide a thin film in which the moving degree is high and uniform because the amount of catalytic metals to be intruded is controlled by using the same and to produce a thin film element using the same.;SOLUTION: The target is provided with a target material 11 containing at least one kind among the groups consisting of Ni, Cu, Sn, Ag, Al and Co by 0.01 to 1 atomic %, and the balance substantially Si and a backing plate 12 supporting the target material 11.;COPYRIGHT: (C)2001,JPO