PROTECTION OF METAL FILM ON SURFACE OF STRUCTURE FORMED ON SEMICONDUCTOR SUBSTRATE IN ETCHING FOR SUBSTRATE USING KOH ETCHING LIQUID

摘要

PROBLEM TO BE SOLVED: To provide a microminiature structure that is formed on a semiconductor substrate on which fine working to be concrete by KOH circumstantially by wet chemical etching, is performed, by a CMOS technique in a field of microminiature structures. SOLUTION: By depositing metal films (40, 41 and 43) containing at least one outer gold layer 43 on the surface of a structure, the structure is protected from a KOH reactive agent. Advantageously, there is no necessity for using a mechanical protective device by providing the metal films (40, 41 and 43), thereby batch-processing a wafer. Further, this process is compatible with a standard gold bump process perfectly.